Contents of Journal of Thermoelectricity, No.2, 1997
Yu.G.Gurevich. Thermoelectric Phenomena in Bipolar Semiconductors.
A new approach to the studies of thermoelectric phenomena in bipolar semiconductors has been suggested. Nonequilibrium carriers have been shown to emerge in the temperature field, hence the necessity of taking recombination into account. Boundary conditions for the bipolar semiconductors - metal contact interface have been stated. A concept of "equilibrium" electron and hole concentration has been introduced.
It has been proved that the results of traditional theory are valid only at the infinite rate of the bulk or surface recombination.
A cycle of works (party published, see [1]-[2]) made in coauthorship with Dr. G.N.Logvinov, Ternopol Branch of Institute of Thermoelectricity of Ukraine (Chernovtsy) Dr. O.I.Lyubimov, State University of Kharkov (Ukraine) and M.Sc. O.Yu.Titov, CINVESTAV - I.P.N. (Mexico D.F.) have served the foundation for the present lecture.
P.I.Baransky. A.G.Samoilovich and the Formation of Fundamental Ideas Related to the Processes of Electron Transfer in Multi-Valley Semiconductors.
Yu.G.Gurevich, G.Gonzales de la Cruz, G.N.Logvinov, M.N.Kosyanchuk. Thermal Waves in Semiconductors.
R.V.Skolozdra. New Intermetallic Compounds Perspective in Thermoelectricity
A.F.Semizorov. Cu behaviour in Pressed Thermoelectric Materials Based on Bi2Te3
Cu impurity behaviour in pressed samples manufactured on the basic of p-(Sb2Te3)0.72(Bi2Te3)0.25(Sb2Se3)0.03 solid solution has been investigated. The results of measuring thermoelectric parameters on Cu-doped samples stored over a long period of time in the air have shown that this thermoelectric material has stable properties.
S.O.Philin. Thermoelectric Ice Makers: Calculation, Design, Manufacturing Experience
L.Petryshyn. Methods and Facilities for Analog-to-Digital Conversion of Thermoelectric Parameters