L.I. Anatychuk1, O.À. Pustovalov2, L.T. Strutynska1. THERMOELECTRIC MICROGENERATORS. 1- Institute of Thermoelectricity, Chernivtsi, Ukraine. 2- R & D Centre “BIAPOS”, Moscow, Russia. 2007
, No.1.- p.5-27.
This paper addresses the problems of development and application of microgenerators in the following areas of focus.
A. Casian, V. Dusciac. HIGH VALUES OF THERMOELECTRIC POWER FACTOR EXPECTED IN QUASI-ONE-DIMENSIONAL ORGANIC CRYSTALS. Department of Computers, Informatics and Microelectronics.Technical University of Moldova, Chisinau, Moldova. 2007
, No. 1.- p.28-36.
The possibility to achieve high values of thermoelectric power factor in quasi-one-dimensional organic crystals is studied. It is shown that under certain conditions leading to the interference of two main electron-phonon interactions it is possible to increase simultaneously the electrical conductivity and ther-mopower (Seebeck coefficient). As a result, values of thermoelectric power factor much higher than known ones in inorganic thermoelectric materials are predicted.
A. I. Kopyl, I. I. Pavlovich, I. S. Termena. THERMOELECTRIC PROPERTIES OF p-(Bi2Te3)0.25(Sb2Te3)0.72(Sb2Se3)0.03 Pb-DOPED MATERIAL WITH EXCESS TELLURIUM. Institute of Thermoelectricity. Chernivtsi. Ukraine. 2007
, No. 1.- p. 37-42.
The research of the dependence of power factor a2s of p-(Bi2Te3)0.25(Sb2Te3)0.72(Sb2Se3)0.03 solid solutions, grown using vertical zone recrystallization method, on the depth (concentration) of joint lead and excess tellurium alloying is carried out. The effect of the annealing time on the power parameter at ~650K is investigated. It is established that a change in the ratio of the number of holes, formed due to anti-structural defects, towards the increase of hole (formed due to dopant (Pb) presence) concentration contributes to the increase of a2s and minimizes thermal degradation of the material at hot junction operating temperatures about ~650 K. The application of such material for thermoelectric genera-tors production allowed to improve their specific power by 15%.
Yu . V. Stadnyk1, V.À. Romaka2,3. PECULIARITIES OF ELECTRICAL CONDUCTIVITY MECHANISMS OF SEMICONDUCTING SOLID SOLUTION TiNiSn1-xInx. 1- Franko Lviv National University. 2- Ya. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics National Academy of Sciences of Ukraine.3- “Lvivska Polytekhnika” National University, Lviv, Ukraine. 2007
, No. 1.- p.43-51.
Effect of doping n-TiNiSn intermetallic semiconductor with In acceptor impurity on the value of thermoelectric power factor (Z*) in the temperature range Ò = 80 - 380 K was studied. Temperature and concentration dependences of electric resistivity, thermoelectric coefficient and magnetic susceptibility of the semiconducting solid solution TiNiSn1-xInx, õ = 0 - 0.1 were investigated. Analysis of possible mechanisms of electrical conductivity of TiNiSn1-xInx in the temperature range under investigation was conducted.
Î.². Yeriomenko, V.B. Lototsky, Î.Ì. Manik, Ì.D. Raransky. INVESTIGATION OF CHEMICAL BOND PECULIARITIES IN CRYSTALS OF CdSb-ZnSb SOLID SOLUTIONS. Yu. Fedkovych Chernivtsi National University. Ukraine. 2007
, No.1. - p. 52-64.
The calculation of the stiffness coefficients of certain chemical bonds, which correspond to different interatomic spacings in crystals of CdSb-ZnS solid solutions, was performed.
The dynamics of chemical bond formation depending on composition of initial components and tem-perature was investigated.
V.V. Lysko. EMISSIVITY AND HEAT-TRANSFER FACTOR OF THERMOELECTRIC MATERIAL. Institute of Thermoelectricity. Chernivtsi. Ukraine.2007
, No.1. - p. 65-67.
Temperature dependences of the emissivity and convective heat-transfer factor for Bi2Te3 based thermoelectric material in the temperature range of 40 - 200° C are established.
L. I. Anatychuk1, V. I. Bodnaruk2. THERMOELECTRIC AC CONVERTERS FOR MEASURING EQUIPMENT. 1- Institute of Thermoelectricity,Chernivtsi. 2- Yury Fedkovych Chernivtsi National University. Ukraine. 2007
, No.1. - p. 68-82.
The results of the research related to the design, production and testing of thermoelectric converters using optimized semiconductor materials are reported. The devices are designed for the measurements of the effective values of alternating current and voltage, but they can have many other applications, in particular for measuring energy of electric pulses, coefficient of the waveform, etc. The parameters and the characteristics of semiconductor thermal converters, and their electrical and physical properties are discussed.
E.M. Sher. THERMOELECTRIC CONVERTERS OF ELECTRICAL AND OPTICAL SIGNALS-NEW CLASS OF THERMOELECTRIC DEVICES. Physics and Technical Institute. Saint-Petersburg. Russia. 2007
, No.1. - p. 83-94.
The new class of thermoelectric devices for conversion of various signals is offered. It is based on use of thermoelectric control in parameters of elements with phase transitions in narrow temperature area of phase transition. With decreasing width of working temperature area, the overall performance of thermoelements sharply increases, providing effective transformation of signals at the minimal expenses of energy.
As a result, descriptions of several (developed on the basis of these two principles) thermoelectric con-verters of signals are obtained. The quantity of types of signal converters can be considerably increased by using elements with various phase transitions in various temperature areas.
With reducing thermoelements to the micron and submicron size, possible applications of thermoelectric converters can be expanded to the area of high frequencies and integrated technologies.